发明名称 Semiconductor device and method for forming the same
摘要 Devices and methods are disclosed a dielectric interlayer made of materials capable of forming tensile force is formed over a semiconductor substrate, and a fuse metal having stronger tensile force than the first dielectric interlayer is formed over the first dielectric interlayer. Accordingly, formation of fuse residues when blowing a fuse can be prevented. Furthermore, energy and a spot size of a laser applied when blowing a fuse can be reduced. Moreover, damage to neighboring fuses can be prevented, and a fuse made of materials that are difficult to blow the fuse can be cut. Further, since polymer-series materials are used as a dielectric interlayer, the coupling effect between wiring lines can be reduced considerably.
申请公布号 KR101095770(B1) 申请公布日期 2011.12.21
申请号 KR20090019891 申请日期 2009.03.09
申请人 发明人
分类号 H01L23/62 主分类号 H01L23/62
代理机构 代理人
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