Method for manufacturing group III nitride semiconductor layer, method for manufacturing group III nitride semiconductor light-emitting device, and group III nitride semiconductor light-emitting device, and lamp

摘要

A method for manufacturing a Group III nitride semiconductor layer according to the present invention includes a sputtering step of disposing a substrate and a target containing a Group III element in a chamber, introducing a gas for formation of a plasma in the chamber and forming a Group III nitride semiconductor layer added with Si as a dopant on the substrate by a reactive sputtering method, wherein a Si hydride is added in the gas for formation of a plasma.