发明名称 Method for producing sputtering target material for Ni-W based interlayer
摘要 There is provided a method for producing sputtering target materials which are used for a Ni—W based interlayer in a perpendicular magnetic recording medium. In this producing method, a Ni—W based alloy powder is prepared as a raw material powder. The alloy powder comprises 5 to 20 at % of W and the balance Ni and unavoidable impurities and is produced by gas atomization. The raw material powder is consolidated at a temperature ranging from 900 to 1150° C. This producing method makes it possible to significantly restrain expansion of the powder-filled billet in the consolidation step, thus efficiently producing Ni—W based sputtering target materials with stable qualities.
申请公布号 US8080201(B2) 申请公布日期 2011.12.20
申请号 US20080173337 申请日期 2008.07.15
申请人 SAWADA TOSHIYUKI;YANAGITANI AKIHIKO;SANYO SPECIAL STEEL CO., LTD. 发明人 SAWADA TOSHIYUKI;YANAGITANI AKIHIKO
分类号 B22F3/15 主分类号 B22F3/15
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