发明名称 |
Method for producing sputtering target material for Ni-W based interlayer |
摘要 |
There is provided a method for producing sputtering target materials which are used for a Ni—W based interlayer in a perpendicular magnetic recording medium. In this producing method, a Ni—W based alloy powder is prepared as a raw material powder. The alloy powder comprises 5 to 20 at % of W and the balance Ni and unavoidable impurities and is produced by gas atomization. The raw material powder is consolidated at a temperature ranging from 900 to 1150° C. This producing method makes it possible to significantly restrain expansion of the powder-filled billet in the consolidation step, thus efficiently producing Ni—W based sputtering target materials with stable qualities. |
申请公布号 |
US8080201(B2) |
申请公布日期 |
2011.12.20 |
申请号 |
US20080173337 |
申请日期 |
2008.07.15 |
申请人 |
SAWADA TOSHIYUKI;YANAGITANI AKIHIKO;SANYO SPECIAL STEEL CO., LTD. |
发明人 |
SAWADA TOSHIYUKI;YANAGITANI AKIHIKO |
分类号 |
B22F3/15 |
主分类号 |
B22F3/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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