发明名称 Combo-type semiconductor integrated circuit supplied with a plurality of external voltages
摘要 A combo semiconductor memory apparatus capable of reducing current and power consumption is provided. The semiconductor memory apparatus includes: a signal generator that generates a voltage control signal according to the level of an external voltage; and a voltage generator that pumps up the level of the external voltage in response to the voltage control signal and outputs the pumped voltage to a high-level voltage output terminal, or supplies the external voltage as a high-level voltage.
申请公布号 US8081524(B2) 申请公布日期 2011.12.20
申请号 US20070819261 申请日期 2007.06.26
申请人 PARK MUN-PHIL;HYNIX SEMICONDUCTOR INC. 发明人 PARK MUN-PHIL
分类号 G11C5/14 主分类号 G11C5/14
代理机构 代理人
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