| 摘要 |
A non-volatile tri-state random access memory device, including a permanent magnetic bit; a write module in functional communication with the permanent magnetic bit and configured to selectably alter the permanent magnetic bit between three magnetic states, a write module including a write coil disposed about the permanent magnetic bit and in communication with a source of electrical power; and a read module in functional communication with the permanent magnetic bit and configured to observe and communicate each of three magnetic states of the permanent magnetic bit, the read module including a read sensor coupled to a read return line. |
