发明名称 |
Film formation apparatus and method for using same |
摘要 |
A method for using a film formation apparatus for a semiconductor process to form a thin film on a target substrate inside a reaction chamber includes performing a cleaning process to remove a by-product film deposited on a predetermined region in a gas route from a film formation gas supply system, which supplies a film formation gas contributory to film formation, through the reaction chamber to an exhaust system, by alternately repeating an etching step and an exhaust step a plurality of times in a state where the reaction chamber does not accommodate the target substrate. The etching step includes supplying a cleaning gas in an activated state for etching the by-product film onto the predetermined region, thereby etching the by-product film. The exhaust step includes stopping supply of the cleaning gas and exhausting gas by the exhaust system from a space in which the predetermined region is present. |
申请公布号 |
US8080477(B2) |
申请公布日期 |
2011.12.20 |
申请号 |
US20080285513 |
申请日期 |
2008.10.07 |
申请人 |
NODERA NOBUTAKE;SATO JUN;MATSUNAGA MASANOBU;HASEBE KAZUHIDE;TOKYO ELECTRON LIMITED |
发明人 |
NODERA NOBUTAKE;SATO JUN;MATSUNAGA MASANOBU;HASEBE KAZUHIDE |
分类号 |
H01L21/461;C23C16/452;H01L21/331 |
主分类号 |
H01L21/461 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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