发明名称 |
Robust top-down silicon nanowire structure using a conformal nitride |
摘要 |
In one exemplary embodiment, a method for fabricating a nanowire product comprising: providing a wafer having a buried oxide (BOX) upper layer in which a well is formed, the wafer further having a nanowire having ends resting on the BOX layer such that the nanowire forms a beam spanning said well; and forming a mask coating on an upper surface of the BOX layer leaving an uncoated window over a center part of said beam over said well and also forming a mask coating around beam intermediate ends between each end of a beam center part and a side wall of said well. In another exemplary embodiment, a nanowire product comprising: a wafer having a buried oxide (BOX) upper layer in which a well having side walls is formed; a nanowire having ends resting on the BOX layer so as to form a beam spanning said well and said side walls; and a hard mask coating on an upper surface of said BOX layer and around intermediate ends of said beam between each side wall of said well and ends of a center part of said beam leaving an uncoated window over a beam center part through which oxidation of said beam center part can take place. |
申请公布号 |
US8080456(B2) |
申请公布日期 |
2011.12.20 |
申请号 |
US20090469304 |
申请日期 |
2009.05.20 |
申请人 |
BARWICZ TYMON;SEKARIC LIDIJA;SLEIGHT JEFFREY W.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BARWICZ TYMON;SEKARIC LIDIJA;SLEIGHT JEFFREY W. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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