发明名称 |
Metal line having a MoxSiy/Mo diffusion barrier of semiconductor device and method for forming the same |
摘要 |
A metal line having a MoxSiy/Mo diffusion barrier of a semiconductor device and corresponding methods of fabricating the same are presented. The metal line includes an insulation layer, a diffusion barrier, and a metal layer. The insulation layer is formed on a semiconductor substrate and has a metal line forming region. The diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and has a stack structure composed of a MoxSiy layer and a Mo layer. The metal layer is formed on the diffusion barrier which fills in the metal line forming region of the insulation layer. |
申请公布号 |
US8080472(B2) |
申请公布日期 |
2011.12.20 |
申请号 |
US20090472721 |
申请日期 |
2009.05.27 |
申请人 |
OH JOON SEOK;YEOM SEUNG JIN;KIM BAEK MANN;JUNG DONG HA;LEE NAM YEAL;KIM JAE HONG;HYNIX SEMICONDUCTOR INC. |
发明人 |
OH JOON SEOK;YEOM SEUNG JIN;KIM BAEK MANN;JUNG DONG HA;LEE NAM YEAL;KIM JAE HONG |
分类号 |
H01L21/425;H01L21/4763 |
主分类号 |
H01L21/425 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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