Method for controlling the electrical performances of thin-film transistors based on solution-processed oxide semiconductor via fluorine-doping method,申请号KR20090083357-传众专利搜索

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发明名称	Method for controlling the electrical performances of thin-film transistors based on solution-processed oxide semiconductor via fluorine-doping method
摘要
申请公布号	KR101096079(B1)	申请公布日期	2011.12.20
申请号	KR20090083357	申请日期	2009.09.04
申请人		发明人
分类号	H01L29/786	主分类号	H01L29/786
代理机构		代理人
主权项
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