发明名称 |
Effecting selectivity of silicon or silicon-germanium deposition on a silicon or silicon-germanium substrate by doping |
摘要 |
The invention relates to a method for selective deposition of Si or SiGe on a Si or SiGe surface. The method exploits differences in physico-chemical surface behavior according to a difference in doping of first and second surface regions. By providing at least one first surface region with a Boron doping of a suitable concentration range and exposing the substrate surface to a cleaning and passivating ambient atmosphere in a prebake step at a temperature lower or equal than 800° C., a subsequent deposition step of Si or SiGe will not lead to a layer deposition in the first surface region. This effect is used for selective deposition of Si or SiGe in the second surface region, which is not doped with Boron in the suitable concentration range, or doped with another dopant, or not doped. The method thus saves a usual photolithography sequence required for selective deposition of Si or SiGe in the second surface region according to the prior art.
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申请公布号 |
US8080452(B2) |
申请公布日期 |
2011.12.20 |
申请号 |
US20070375895 |
申请日期 |
2007.07.31 |
申请人 |
MONDOT ALEXANDRE;MULLER MARKUS GERHARD ANDREAS;KORMANN THOMAS;NXP, B.V.;STMICROELECTRONICS (CROLLES 2) SAS |
发明人 |
MONDOT ALEXANDRE;MULLER MARKUS GERHARD ANDREAS;KORMANN THOMAS |
分类号 |
H01L21/338;H01L21/331;H01L21/4763;H01L21/8238;H01L21/8242 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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