发明名称 |
Semiconductor integrated circuit |
摘要 |
A field-effect transistor for nonvolatile memory holding use and a field-effect transistor for logical operation use are manufactured in the same structure on the same semiconductor substrate without separately providing manufacturing processes for the field-effect transistors for the two uses. Both a memory circuit and a logic circuit of a semiconductor integrated circuit are composed of n-channel and p-channel field-effect transistors including a memory holding material in a gate insulating structure. A logical operation state, a memory writing state and a nonvolatile memory holding state are electrically switched by controlling the level and application timing of a voltage to be applied between a gate conductor and a substrate region of the n-channel and p-channel field-effect transistors including the memory holding material in the gate insulating structure. |
申请公布号 |
US8081499(B2) |
申请公布日期 |
2011.12.20 |
申请号 |
US20060912184 |
申请日期 |
2006.04.13 |
申请人 |
TAKAHASHI MITSUE;SAKAI SHIGEKI;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY |
发明人 |
TAKAHASHI MITSUE;SAKAI SHIGEKI |
分类号 |
G11C11/22;G11C11/24 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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