发明名称 |
Semiconductor device manufacturing method and silicon oxide film forming method |
摘要 |
A semiconductor device manufacturing method has forming element isolation trenches in a semiconductor substrate, forming a silicon compound film in insides of the element isolation trenches in order to embed the element isolation trenches, conducting a first oxidation processing at a first temperature to reform a surface of the silicon compound film to a volatile matter emission preventing layer which permits passage of an oxidizing agent and impurities and which does not permit passage of a volatile matter containing silicon atoms, and conducting a second oxidation processing at a second temperature which is higher than the first temperature to form a coated silicon oxide film inside the element isolation trenches. |
申请公布号 |
US8080463(B2) |
申请公布日期 |
2011.12.20 |
申请号 |
US20100691483 |
申请日期 |
2010.01.21 |
申请人 |
IWASAWA KAZUAKI;HOSHI TAKESHI;NAKAZAWA KEISUKE;MATSUO SHOGO;NAKAO TAKASHI;KATO RYU;KAI TETSUYA;SEKINE KATSUYUKI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
IWASAWA KAZUAKI;HOSHI TAKESHI;NAKAZAWA KEISUKE;MATSUO SHOGO;NAKAO TAKASHI;KATO RYU;KAI TETSUYA;SEKINE KATSUYUKI |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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