发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
A method of manufacturing a semiconductor device includes the steps of forming a first columnar semiconductor layer on a substrate forming a first flat semiconductor layer forming a first semiconductor layer of a second conductive type, and forming a first insulating film. The method further includes the steps of forming a gate insulating film and a gate electrode, forming a second semiconductor layer of the second conductive type, forming a semiconductor layer of a first conductive type and forming a metal-semiconductor compound. The first insulating film has a thickness larger than that of the gate insulating film formed around the first columnar silicon layer. |
申请公布号 |
US8080458(B2) |
申请公布日期 |
2011.12.20 |
申请号 |
US20100761735 |
申请日期 |
2010.04.16 |
申请人 |
MASUOKA FUJIO;NAKAMURA HIROKI;ARAI SHINTARO;KUDO TOMOHIKO;SINGH NAVAB;BUDDHARAJU KAVITHA DEVI;NANSHENG SHEN;SAYANTHAN RUKMANI DEVI;UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. |
发明人 |
MASUOKA FUJIO;NAKAMURA HIROKI;ARAI SHINTARO;KUDO TOMOHIKO;SINGH NAVAB;BUDDHARAJU KAVITHA DEVI;NANSHENG SHEN;SAYANTHAN RUKMANI DEVI |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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