| 摘要 |
FIELD: power industry. ^ SUBSTANCE: manufacturing method of nanowires, which involves the formation stage on the substrate of mask for selective growth, which contains a group of holes located in certain order and opening a group of substrate sections; stage of selective non-pulse growth, in which in each of the above sections there grown through the above holes are cores of nanowires by using the growth mode including simultaneous supply of initial gaseous substances forming cores of nanowires, to crystal growth reactor (non-pulse mode), switching stage in which after formation of nanowire cores with the specified characteristics there switched is growth mode from non-pulse mode to the mode at which there performed is alternate supply of initial gaseous substances forming threadlike part of nanowires, to crystal growth reactor (pulse mode), and stage of pulse growth, at which there continued is growth of threadlike parts of nanowires in pulse mode with formation of multiple semiconductor nanowires. ^ EFFECT: obtaining high-quality nanowires and instruments on their base. ^ 25 cl, 21 dwg |
