METHOD OF MANUFACTURING A VERTICAL TYPE SEMICONDUCTOR DEVICE

摘要

PURPOSE: A vertical type semiconductor device manufacturing method is provided to use a material with a small stress variation of a film by heat as a sacrificial film and inter-layer insulating film, thereby reducing lifting or crack fault generation of the film due to stress. CONSTITUTION: A pad insulating film(102) is arranged on a substrate(100). The pad insulating film is arranged by thermal oxidation of the substrate. A sacrificial film(104) is arranged on the pad insulating film. An inter-layer insulating film(106) is arranged on the sacrificial film. The sacrificial film is arranged with a material which has an etching selection ratio with the inter-layer insulating film.