发明名称 METHOD OF FORMING GRAPHENE PATTERN UTILIZING IMPRINT
摘要 <p>PURPOSE: A method for forming a graphene pattern using an imprinting technique is provided to easily adjust the thickness of transferred graphene by adjusting the strength of a voltage if a graphene transferring process is implemented based on an electronic filed. CONSTITUTION: An imprint stamp(210), in which a pattern(205) is formed on a master substrate(200), is prepared. A metal film(220) containing a graphitization catalyst is formed on the imprint stamp. Graphene(230) is formed on the imprint stamp. The graphene is transferred to a substrate(240) for manufacturing devices in order to form a graphene pattern. The graphitization catalyst is one or more selected from Ni, Co, Fe, Pt, Au, Al, Cr, Cu, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V, and Zr.</p>
申请公布号 KR20110136340(A) 申请公布日期 2011.12.21
申请号 KR20100056267 申请日期 2010.06.15
申请人 KOREA ADVANCED NANO FAB CENTER 发明人 PARK, HYEONG HO;YOO, SEUNG HWAN;KANG, HO KWAN;LEE, JEONG GUN;KO, CHUL GI;JUNG, SANG HYUN;SHIN, HYUN BEOM;SONG, HO YOUNG;JANG, MIN CHUL
分类号 B82B3/00;B29C33/38;C01B31/04 主分类号 B82B3/00
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