摘要 |
<p>PURPOSE: A method for forming a graphene pattern using an imprinting technique is provided to easily adjust the thickness of transferred graphene by adjusting the strength of a voltage if a graphene transferring process is implemented based on an electronic filed. CONSTITUTION: An imprint stamp(210), in which a pattern(205) is formed on a master substrate(200), is prepared. A metal film(220) containing a graphitization catalyst is formed on the imprint stamp. Graphene(230) is formed on the imprint stamp. The graphene is transferred to a substrate(240) for manufacturing devices in order to form a graphene pattern. The graphitization catalyst is one or more selected from Ni, Co, Fe, Pt, Au, Al, Cr, Cu, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V, and Zr.</p> |
申请人 |
KOREA ADVANCED NANO FAB CENTER |
发明人 |
PARK, HYEONG HO;YOO, SEUNG HWAN;KANG, HO KWAN;LEE, JEONG GUN;KO, CHUL GI;JUNG, SANG HYUN;SHIN, HYUN BEOM;SONG, HO YOUNG;JANG, MIN CHUL |