SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

摘要

PURPOSE: A method for processing a substrate and a substrate processing apparatus is provided to improve controllability of the density distribution of plasma by preventing the consumption of an upper electrode. CONSTITUTION: The susceptor(12) of a cylindrical shape is arranged inside a chamber(11) to put on a wafer(W). A lateral exhaust duct(13) is formed with the inner sidewall of the chamber and the side of the susceptor. An exhaust plate(14) is arranged in the halfway of the lateral exhaust duct. The exhaust plate accepts and reflects plasma which is generated in a process chamber(15). An exhaust pipe(17), which discharges a gas in the chamber, is connected to a lower part(16) in the chamber. A TMP(Turbo Molecular Pump) and a DP(Dry Pump) are connected in the exhaust pipe.