| 摘要 |
<p>PURPOSE: A method for separating a mask layout is provided to increase DOF(Depth of Focus), EL(Energy Latitude), and MEF(Mask Error Factor) process margins, thereby enhancing the properties and reliability of a device. CONSTITUTION: A design pattern layout is divided into first and second backup mask layouts(S100). The first backup mask layout is combined with an under-sized second backup mask layout to determine a first mask layout(S110). The second backup mask layout is combined with an under-sized first backup mask layout to determine a second mask layout(S120). Stitching, OPC(Optical Proximity Correction), and MRC(Mask Rule Check) are performed on the first and second mask layouts. The first and second mask layouts are verified(S140).</p> |
