发明名称 METHODS OF DEPOSITING ANTIMONY-COMPRISING PHASE CHANGE MATERIAL ONTO A SUBSTRATE AND METHODS OF FORMING PHASE CHANGE MEMORY CIRCUITRY
摘要 <p>A method of depositing an antimony-comprising phase change material onto a substrate includes providing a reducing agent and vaporized Sb(OR)3 to a substrate, where R is alkyl, and forming there-from antimony-comprising phase change material on the substrate. The phase change material has no greater than 10 atomic percent oxygen, and includes another metal in addition to antimony.</p>
申请公布号 KR20110135993(A) 申请公布日期 2011.12.20
申请号 KR20117027063 申请日期 2010.03.24
申请人 MICRON TECHNOLOGY, INC. 发明人 QUICK TIMOTHY A.;MARSH EUGENE P.
分类号 H01L21/8247;H01L27/115 主分类号 H01L21/8247
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