发明名称 |
Amorphous semiconductor threshold switch volatile memory cell |
摘要 |
A voltage memory switch may be formed of an amorphous semiconductor threshold switch and a select device. The amorphous threshold switch may be latched into one of two different current conducting levels. Then, in some embodiments, a relatively dense memory array can be achieved by maintaining an appropriate bias on the cell to prevent it from losing the programmed state.
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申请公布号 |
US8081506(B2) |
申请公布日期 |
2011.12.20 |
申请号 |
US20090637358 |
申请日期 |
2009.12.14 |
申请人 |
KUO CHARLES C.;KAU DERCHANG;INTEL CORPORATION |
发明人 |
KUO CHARLES C.;KAU DERCHANG |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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