| 摘要 |
An over erase correction method of a flash memory apparatus is provided. The flash memory apparatus includes at least a microprocessor, a memory array, a bit line exchange unit and a column decoder. By controlling the column decoder of the flash memory during a period of the over-erase correction, the column decoder outputs control signals to the bit line exchange unit for selecting at least one of the bit lines according to a magnitude of the bit line leakage current. The drop in the charge pump voltage due to the bit line leakage current is reduced, and thus, the over-erase correction is executed effectively during the period of the over-erase correction.
|
