| 摘要 |
PURPOSE: A method for manufacturing anti-fuse of a semiconductor device is provided to improve the property of anti-fuse by degrading the property of the gate oxide of a fuse. CONSTITUTION: In a method for manufacturing anti-fuse of a semiconductor device, an element isolation film(150) defining an active area(140) is formed on a semiconductor substrate(100). A nitride film is formed in the front side of the semiconductor substrate. A hard mask layer is formed in the front side including a peripheral circuit section. A recess(220) is formed by etching a hard mask layer, a nitride film, and the semiconductor substrate. A gate oxidation film is formed in the front side including the recess. A reflection barrier layer is formed in the top side of a hard mask layer.
|
