HOMOEPITAXIAL III-V NITRIDE ARTICLE, DEVICE, AND METHOD OF FORMING III-V NITRIDE HOMOEPITAXIAL LAYER

摘要

PROBLEM TO BE SOLVED: To provide a III-V nitride article that is useful for a device, such as LED and a high electron mobility transistor.

SOLUTION: There is provided a homoepitaxial III-V nitride article including a III-V nitride homoepitaxial layer which deposits on a free-standing III-V nitride substrate. The III-V nitride homoepitaxial layer has dislocation density of less than 1E6 /cm2and has characteristics selected from: (i) having oxide between the III-V nitride homoepitaxial layer and the free-standing III-V nitride substrate; (ii) having an epi interlayer between the III-V nitride homoepitaxial layer and the free-standing III-V nitride substrate; and (iii) having offcuts of the free-standing III-V nitride substrate and having non (0001) homoepitaxial step flow crystal growth in the III-V nitride homoepitaxial layer.

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