| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device for which a chip size can be reduced and wiring of a re-wiring layer can be facilitated. <P>SOLUTION: A semiconductor device has a semiconductor substrate having an upper surface on which plural pad electrodes 4 are provided, a re-wiring layer 3 which is provided with contact wires connected to the pad electrodes and disposed on the semiconductor substrate through an insulating film, and plural ball electrodes 2 provided on the re-wiring layer. Plural first pad electrodes 4a and 4b are arranged so as to be aligned with one another on the outer periphery of the semiconductor substrate along a first side 101 of the semiconductor substrate which is parallel to the substrate plane of the semiconductor substrate, and plural first ball electrodes 2a and 2b are arranged to be aligned with one another on the outer periphery of the re-wiring layer along the first side. Some of the plural first ball electrodes 2b are connected to first pad electrodes 4b located at the lower side out of the plural first pad electrodes through contact wires, and no first pad electrode is disposed at the lower side of the first ball electrode 2a which is closest to the end portion of the first side. <P>COPYRIGHT: (C)2012,JPO&INPIT |
