发明名称 ORGANIC FIELD EFFECT TRANSISTOR WITH ORGANIC DIELECTRIC
摘要 <P>PROBLEM TO BE SOLVED: To provide a technique to process a high-quality organic field effect device by improving an interface of an organic semiconductor and a gate insulator by the choice of materials and preparation conditions. <P>SOLUTION: A technique of processing a high-quality organic field effect device comprises steps of: depositing from a solution an organic semiconductor layer 3; and depositing from a solution a layer 2 of low permittivity insulating material forming at least a part of a gate insulator, such that the low permittivity insulating material is in contact with the organic semiconductor layer 3, in which the low permittivity insulating material is of relative permittivity from 1.1 to below 3.0. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011254075(A) 申请公布日期 2011.12.15
申请号 JP20110109287 申请日期 2011.05.16
申请人 MERCK PATENT GMBH 发明人 STEVEN W FLEMING;MOHIELDIN KUPHAFF SWORD;SIMON DOMINIC OGIER;BERES JANOS
分类号 H01L21/336;H01L21/368;H01L21/02;H01L21/312;H01L21/316;H01L29/786;H01L51/00;H01L51/05;H01L51/30;H01L51/40 主分类号 H01L21/336
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