| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technology for realizing a low-cost and high capacity nonvolatile semiconductor memory device. <P>SOLUTION: The semiconductor memory device comprises a substrate including peripheral circuits, and a chain cell constructed on the substrate. The chain cell includes a chain memory cell group in which a plurality of memory cells each having a transistor and a recording material connected in parallel are connected in a thickness direction of the substrate in series, and a polysilicon diode PD connected in series with the chain memory cell group and functioning as a selection element of the chain memory cell group. The recording material is formed such that three kinds of phase change materials 7a, 7b, 7c having resistant values different from each other are coaxially stacked. <P>COPYRIGHT: (C)2012,JPO&INPIT |
