| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a backside-illuminated solid-state imaging device capable of improving light-receiving sensitivity, without forming an anti-reflection film. <P>SOLUTION: The backside-illuminated solid-state imaging device in which a plurality of pixels are arranged in a two-dimensional form comprises: a semiconductor substrate 101; a light-receiving part that is formed, in every pixel, on a first surface of the semiconductor substrate 101 and converts incident light into an electrical signal; a wiring layer that is formed on a second principal surface opposite to the first surface on the semiconductor substrate 101 and reads the electrical signal; and a color filter layer 105 that is provided on the light-receiving parts and makes the incident light selectively transmit by wavelength in every pixel. The color filter layer 105 has a structure in which a first dielectric layer having a predetermined refractive index and a second dielectric layer having a lower refractive index than the first dielectric layer are alternately stacked. The first dielectric layer 1051, which is closest to the light-receiving parts of the color filter layer 105, is adjacent to the light-receiving parts. <P>COPYRIGHT: (C)2012,JPO&INPIT |
