发明名称 METHOD FOR PRODUCING SINGLE CRYSTAL AND CRUCIBLE FOR SINGLE CRYSTAL PRODUCTION
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for producing a single crystal and a crucible for single crystal production, sufficiently suppressible of twin defects. <P>SOLUTION: The method for producing a single crystal includes steps of: disposing a seed crystal within the crucible 1; disposing a raw material on the seed crystal within the crucible 1; disposing a sealant on the raw material within the crucible 1; and growing the single crystal on the seed crystal by melting the raw material followed by coagulating. Groove portions 13 are formed on the inner surface of the crucible 1 so as to extend in the depth direction. In the step of disposing the seed crystal, the seed crystal is disposed within the crucible 1 so that the groove portion 13 is located at a facet generating direction of the single crystal. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011251891(A) 申请公布日期 2011.12.15
申请号 JP20110102737 申请日期 2011.05.02
申请人 SUMITOMO ELECTRIC IND LTD 发明人 NISHIOKA SHIKO;KAWASE TOMOHIRO
分类号 C30B11/00 主分类号 C30B11/00
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