发明名称 |
FREESTANDING GAN CRYSTAL SUBSTRATE AND MANUFACTURING METHOD FOR SAME |
摘要 |
<p>Provided is a freestanding GaN crystal substrate that is electrically conductive and emits very little yellow light from all surfaces, and a method for manufacturing the same. The present freestanding GaN crystal substrate grown by HVPE, has a (0001) face, and a {10-11} face and/or a {11-22} face existing together as crystal growth surfaces excluding crystal side surfaces, wherein the (0001) face growth crystal region has a carbon concentration of no more than 5x1016 at/cm3, a silicon concentration of at least 5 x 1017 silicon at/cm3 and no more than 2 x 1018 at/cm3, and an oxygen concentration of no more than 1 x 1017 at/cm3, and in a faceted crystal region with at least a {10-11} face and/or a {11-22} face as a growth face, carbon concentration is no more than 3 x 1016 at/cm3, silicon concentration is no more than 5 x 1017 at/cm3, and oxygen concentration is at least 5 x 1017 at/cm3 and no more than 5 x 1018 at/cm3.</p> |
申请公布号 |
WO2011155341(A1) |
申请公布日期 |
2011.12.15 |
申请号 |
WO2011JP62106 |
申请日期 |
2011.05.26 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES,LTD.;FUJIWARA, SHINSUKE;UEMATSU, KOJI;KASAI, HITOSHI;OKAHISA, TAKUJI |
发明人 |
FUJIWARA, SHINSUKE;UEMATSU, KOJI;KASAI, HITOSHI;OKAHISA, TAKUJI |
分类号 |
C30B29/38;C30B25/16;H01L21/205 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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