SEMICONDUCTOR DEVICE AND METHOD FOR THE PRODUCTION THEREOF

摘要

PURPOSE: A semiconductor device and a method for the production thereof are provided to improve the high speed operation characteristic of the SGT(Surrounding Gate Transistor) by making a metallic silicon compound layer thicker. CONSTITUTION: In a semiconductor device and a method for the production thereof, a first gate insulating layer(140) is formed to surround a first pillar shape semiconductor layer. A first gate electrode(210) is formed in order to surround the first gate insulating layer. A first insulating layer(129a) is formed between the first gate electrode and the first flat type semiconductor layer. A first insulating layer side wall(223) is formed in order to surround the upper region of the first pillar shape semiconductor layer. The second metal semiconductor compound layer(160) is formed in order to be contact to the first high concentration semiconductor layer.