| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition which excels in a mask error factor (MEF) and a focus margin (DOF) in pattern forming. <P>SOLUTION: A resist composition comprises: a polymer which has a group represented by formula (I) and a group represented by formula (II), and do not have an acid labile group; a resin which has an acid labile group, and is insoluble or hardly soluble in an alkali aqueous solution, and can dissolve in an alkali aqueous solution by an action of an acid; and an acid generator. (R<SP POS="POST">1</SP>represents an a fluorinated alkyl group having 1-6 carbon atoms; R<SP POS="POST">2</SP>represents an a fluorinated alkyl group having 1-6 carbon atoms; R<SP POS="POST">3</SP>represents a hydrogen atom or a fluorinated alkyl group having 1-6 carbon atoms; and * represents a bond.) <P>COPYRIGHT: (C)2012,JPO&INPIT |
