| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing an area of a contact part with less number of steps in an interlayer connection process, and a method for manufacturing a semiconductor device. <P>SOLUTION: In a multilayer conductor wiring 10, a part of a conductor 13 is exposed on an inner side of a through hole 15 as an eaves part 13c. A side face contact structure can be formed with a buried metal 16 buried in an inner side of a hole for a through hole of the through hole 15 and the eaves part 13c. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2011253898(A) |
申请公布日期 |
2011.12.15 |
| 申请号 |
JP20100126044 |
申请日期 |
2010.06.01 |
| 申请人 |
NIPPON TELEGR & TELEPH CORP <NTT> |
发明人 |
TSUTSUMI TAKUYA;SUGITANI SUEHIRO;NISHIMURA KAZUMI |
| 分类号 |
H01L23/522;H01L21/3065;H01L21/768;H01L21/822;H01L27/04 |
主分类号 |
H01L23/522 |
| 代理机构 |
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