| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an apparatus for producing a silicon carbide single crystal suppressible of thermal stress that the growing single crystal suffers from a seed crystal mounting part. <P>SOLUTION: The apparatus 1 for producing a silicon carbide single crystal includes a crucible body 5 for holding a raw material 13 for sublimation and a lid 3 to which a first seed crystal mounting part 21 to support a seed crystal 23 is mounted at the position facing the raw material 13 for sublimation. The first seed crystal mounting part 21 is made of graphite, while the seed crystal 23 and the raw material 13 for sublimation are made of silicon carbide. The first seed crystal mounting part 21 is constructed of a thin plate separate from the lid 3. <P>COPYRIGHT: (C)2012,JPO&INPIT |
