发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
The present application discloses a semiconductor device and a method for manufacturing the same. The semiconductor device comprises a semiconductor substrate; a first semiconductor layer on the semiconductor substrate; a second semiconductor layer surrounding the first semiconductor layer; a high k dielectric layer and a gate conductor formed on the first semiconductor layer; source/drain regions formed in the second semiconductor layer, wherein the second semiconductor layer has a slant sidewall in contact with the first semiconductor layer. The semiconductor device has an increased output current, an increased operating speed, and a reduced power consumption due to the channel region of high mobility. |
申请公布号 |
US2011303951(A1) |
申请公布日期 |
2011.12.15 |
申请号 |
US201013060468 |
申请日期 |
2010.09.25 |
申请人 |
ZHU HUILONG;LIANG QINGQING;LUO ZHIJIONG;YIN HAIZHOU;INSITITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES |
发明人 |
ZHU HUILONG;LIANG QINGQING;LUO ZHIJIONG;YIN HAIZHOU |
分类号 |
H01L29/772;H01L21/336 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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