| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device that can compensate insufficient writing caused by erroneously-passed write verification. <P>SOLUTION: A semiconductor memory device in one embodiment includes a plurality of memory cells in which data rewriting is possible, a plurality of bit lines and a plurality of sense circuits. The bit lines are connected to the memory cells. The sense circuits sense and verify the data written into the memory cells while the bit lines are charged to high potential, and set the bit lines, connected with the memory cells determined as defective from the verification result, to high potential during a verification period. <P>COPYRIGHT: (C)2012,JPO&INPIT |
