摘要 |
Embodiments of the invention are directed toward the deposition of Graphene on a semiconductor substrate. In some embodiments, these processes can occur at low temperature levels during a back end of the line process. For example, Graphene can be deposited in a CVD reactor at a processing temperature that is below 600° C to protect previously deposited layers that may be susceptible to sustained higher temperatures. Graphene deposition can include the deposition of an underlayer (e.g., cobalt) followed by the flow of a carbon precursor (e.g., acetylene) at the processing temperature. Graphene can then be synthesized with during cooling, an RTP cure, and/or a UV cure. |
申请人 |
APPLIED MATERIALS, INC.;PADHI, DEENESH;JANZEN, JACOB;SHAIKH, SHAHID;KIM, BH;CHIN, BARRY |
发明人 |
PADHI, DEENESH;JANZEN, JACOB;SHAIKH, SHAHID;KIM, BH;CHIN, BARRY |