发明名称 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
摘要 According to one embodiment, a semiconductor device including a conductive layer formed in a trench formed in a semiconductor substrate via an insulating film, an opening portion of the trench being formed with a plurality of interconnected concaves and with a curved surface as a folding fan so as to set to be the opening portion gradually wider from a sidewall of the trench towards a surface of the semiconductor substrate.
申请公布号 US2011304054(A1) 申请公布日期 2011.12.15
申请号 US201113051193 申请日期 2011.03.18
申请人 SAKAI TAKAYUKI;KABUSHIKI KAISHA TOSHIBA 发明人 SAKAI TAKAYUKI
分类号 H01L23/48;H01L21/20;H01L21/302 主分类号 H01L23/48
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