发明名称 |
INTERCONNECT STRUCTURE AND METHOD OF FABRICATING |
摘要 |
An interconnect structure is provided which comprises a semiconductor substrate; a patterned and cured photoresist wherein the photoresist contains a low k dielectric substitutent and contains a fortification layer on its top and sidewall surfaces forming vias or trenches; and a conductive fill material in the vias or trenches. Also provided is a method for fabricating an interconnect structure which comprises depositing a photoresist onto a semiconductor substrate, wherein the photoresist contains a low k dielectric constituent; imagewise exposing the photoresist to actinic radiation; then forming a pattern of vias or trenches in the photoresist; surface fortifying the pattern of vias or trenches proving a fortification layer on the top and sidewalls of the vias or trenches; curing the pattern of vias or trenches thereby converting the photoresist into a dielectric; and filling the vias and trenches with a conductive fill material. |
申请公布号 |
US2011304053(A1) |
申请公布日期 |
2011.12.15 |
申请号 |
US20100814162 |
申请日期 |
2010.06.11 |
申请人 |
LIN QINGHUANG;PFEIFFER DIRK;SOORIYAKUMARAN RATNAM;INTERNATIONAL BUSINESS MACHINES CORP. |
发明人 |
LIN QINGHUANG;PFEIFFER DIRK;SOORIYAKUMARAN RATNAM |
分类号 |
H01L23/522;H01L21/60 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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