发明名称 |
Novel Poly Resistor and Poly Efuse Design for Replacement Gate Technology |
摘要 |
Methods for fabricating a semiconductor device are disclosed. In an example, a method includes forming an isolation region on a substrate, wherein the isolation region extends a depth into the substrate from a substrate surface; forming a recess in the isolation region, wherein the recess is defined by a concave surface of the isolation region; and forming a first gate structure over the substrate surface and a second gate structure over the concave surface of the isolation region. |
申请公布号 |
US2011303989(A1) |
申请公布日期 |
2011.12.15 |
申请号 |
US201113216114 |
申请日期 |
2011.08.23 |
申请人 |
CHUANG HARRY;THEI KONG-BENG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHUANG HARRY;THEI KONG-BENG |
分类号 |
H01L27/06 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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