| 摘要 |
<p>A method for fabricating a semiconductor device includes: forming first landing metal contacts over a substrate; forming a plurality of bit lines over the first landing metal contacts, the bit lines insulated from the first landing metal contacts by an inter-layer insulation layer; forming second landing metal through-hole contacts passing between adjacent bit lines to be coupled to the first landing metal contacts; forming metal contacts over the second landing metal contacts; and forming a metal line over the metal contacts.</p> |
