METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE: A method for manufacturing a semiconductor substrate is provided to reduce the generation of a bending phenomenon by separating the semiconductor substrate which grown in the side of a non-growth substrate using laser. CONSTITUTION: Semiconductor substrates(22a,22b) are grown up in both side of a non-growth substrate(21). A side of the non-growth substrate is processed. Laser is irradiated to the side of the non-growth substrate. The semiconductor substrate which is grown up in the non-growth substrate and both sides of the non-growth substrate is separated. The non-growth substrate is selected between a sapphire substrate or an aluminum nitride substrate. The laser is one of yag laser and excimer laser.