| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a novel FinFET structure and a method for manufacturing the same. <P>SOLUTION: A single-gate FinFET structure 100 includes an active fin structure having two enlarged head portions and two respective tapered neck portions that connect the enlarged head portions with an underlying ultra-thin body. Two source/drain regions 102, 104 are doped in the two enlarged head portions respectively. An insulation region 26 is interposed between the two source/drain regions. A trench isolation structure 24 is disposed at one side of the tuning fork-shaped fin structure. A single-sided sidewall gate electrode 12b is disposed on a vertical sidewall of the active fin structure opposite to the trench isolation structure in the active fin structure. <P>COPYRIGHT: (C)2012,JPO&INPIT |
