发明名称 |
SUBSTRATE PROCESSING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE MANUFACTURING METHOD |
摘要 |
Embodiments described herein relate to a substrate processing apparatus includes a reaction tube, a processing chamber provided inside the reaction tube to process a substrate therein, an induction target provided inside the reaction tube to surround the processing chamber and configured to heat the substrate, a heat insulator provided inside the reaction tube to surround the induction target, an induction target provided outside the reaction tube to inductively heat at least the induction target, a first gas supply unit for supplying a first gas into the processing chamber, and a second gas supply unit for supplying a second gas to a first gap provided between the induction target and the heat insulator.
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申请公布号 |
US2011306212(A1) |
申请公布日期 |
2011.12.15 |
申请号 |
US201113158089 |
申请日期 |
2011.06.10 |
申请人 |
SATO AKIHIRO;TANAKA AKINORI;ITOH TAKESHI;FUKUDA MASANAO;MORIMITSU KAZUHIRO;HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
SATO AKIHIRO;TANAKA AKINORI;ITOH TAKESHI;FUKUDA MASANAO;MORIMITSU KAZUHIRO |
分类号 |
H01L21/306;B05C19/00;C23F1/00;C23F1/08 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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