发明名称 OPTICAL PROXIMITY CORRECTION PROCESS
摘要 An optical proximity correction process for designing a mask according to a target exposure intensity of each edge of a pattern is provided. Each edge is at a corresponding current edge position which corresponds to a current exposure intensity. The process comprises repeating a convergence process on each edge to determine an adjusted position for the edge until an adjusted exposure intensity of the edge is equal to the target exposure intensity. For each edge, the convergence process comprises comparing the target exposure intensity with the current exposure intensity to determine an in-position correlating to a first exposure intensity and an out-position correlating to a second exposure intensity, wherein the target exposure intensity is within a range between the first and the second exposure intensities. An interpolation is performed to obtain the adjusted position according to the target exposure intensity. The pattern is updated according to the adjusted position.
申请公布号 US2011305977(A1) 申请公布日期 2011.12.15
申请号 US20100796918 申请日期 2010.06.09
申请人 HSIEH TE-HSIEN;LEE JING-YI;UNITED MICROELECTRONICS CORP. 发明人 HSIEH TE-HSIEN;LEE JING-YI
分类号 G03F1/00 主分类号 G03F1/00
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