| 发明名称 |
Epitaxial Growth of III-V Compound Semiconductors on Silicon Surfaces |
| 摘要 |
A device includes a silicon substrate, and a III-V compound semiconductor region over and contacting the silicon substrate. The III-V compound semiconductor region has a U shaped interface with the silicon substrate, with radii of the U shaped interface being smaller than about 1,000 nm. |
| 申请公布号 |
US2011304021(A1) |
申请公布日期 |
2011.12.15 |
| 申请号 |
US20100813822 |
申请日期 |
2010.06.11 |
| 申请人 |
WANN CLEMENT HSINGJEN;KO CHIH-HSIN;WU CHENG-HSIEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WANN CLEMENT HSINGJEN;KO CHIH-HSIN;WU CHENG-HSIEN |
| 分类号 |
H01L29/20;H01L21/20 |
主分类号 |
H01L29/20 |
| 代理机构 |
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