发明名称 |
Nonvolatile Memory Array With Continuous Charge Storage Dielectric Stack |
摘要 |
An integrated circuit of an array of nonvolatile memory cells has a dielectric stack layer over the substrate, and implanted regions in the substrate under the dielectric stack layer. The dielectric stack layer is continuous over a planar region, that includes locations of the dielectric stack layer that store nonvolatile data, such that these locations are accessed by word lines/bit lines. |
申请公布号 |
US2011303968(A1) |
申请公布日期 |
2011.12.15 |
申请号 |
US20100813906 |
申请日期 |
2010.06.11 |
申请人 |
LUE HANG-TING;HSU TZU-HSUAN;LAI SHENG-CHIH;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LUE HANG-TING;HSU TZU-HSUAN;LAI SHENG-CHIH |
分类号 |
H01L29/792;H01L21/336 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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