发明名称 Nonvolatile Memory Array With Continuous Charge Storage Dielectric Stack
摘要 An integrated circuit of an array of nonvolatile memory cells has a dielectric stack layer over the substrate, and implanted regions in the substrate under the dielectric stack layer. The dielectric stack layer is continuous over a planar region, that includes locations of the dielectric stack layer that store nonvolatile data, such that these locations are accessed by word lines/bit lines.
申请公布号 US2011303968(A1) 申请公布日期 2011.12.15
申请号 US20100813906 申请日期 2010.06.11
申请人 LUE HANG-TING;HSU TZU-HSUAN;LAI SHENG-CHIH;MACRONIX INTERNATIONAL CO., LTD. 发明人 LUE HANG-TING;HSU TZU-HSUAN;LAI SHENG-CHIH
分类号 H01L29/792;H01L21/336 主分类号 H01L29/792
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