发明名称 BEARBEITEN VON SUBSTRATEN, INSBESONDERE VON HALBLEITERSUBSTRATEN
摘要 <p>A formation (3) in a first surface of a substrate is machined by an ultraviolet or visible radiation laser, to a predetermined depth that is less than a full depth of the substrate; and material (5) is removed from a second surface of the substrate opposed to the first surface to the predetermined depth from the first surface to communicate with the formation. Material may be removed by, for example, lapping and polishing, chemical etching, plasma etching or laser ablation. The invention has application in, for example, dicing semiconductor wafers or forming metallised vias in wafers.</p>
申请公布号 AT537558(T) 申请公布日期 2011.12.15
申请号 AT20060004748T 申请日期 2002.10.01
申请人 ELECTRO SCIENTIFIC INDUSTRIES, INC. 发明人 BOYLE, ADRIAN;MEIGHAN, OONAGH
分类号 B28D5/00;H01L21/78;B23K26/00;B23K26/12;B23K26/18;B23K26/38;B23K26/40;B23K101/40;B24B;H01L21/00;H01L21/301;H01L21/304;H01L21/46;H01L21/461;H01L21/768;H01L21/98;H01L23/48 主分类号 B28D5/00
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