METHOD FOR PRODUCING EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for producing an epitaxial wafer having good forward voltage by reducing, than before, the failure of the forward voltage (Vf) generated by Si mixed when a p-type layer is formed.

SOLUTION: The method for producing the epitaxial wafer at least includes a step of epitaxially growing a p-type layer by hydride vapor phase epitaxy (HVPE) on a substrate of a compound semiconductor, wherein nitrogen gas is passed in an HVPE furnace when the temperature of the substrate is raised before starting the epitaxial growth of the p-type layer.

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