发明名称 |
P-TYPE DIFFUSION LAYER FORMATION COMPOSITION, AND SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a p-type diffusion layer formation composition capable of forming a p-type diffusion layer and a back electrode while suppressing occurrences of internal stress in a silicon substrate and substrate warpage, in a manufacturing process of a solar cell using a crystal silicon substrate, and to provide a solar cell formed by using the p-type diffusion layer formation composition. <P>SOLUTION: A p-type diffusion layer formation composition includes: metal particles; glass particles containing an acceptor element; a resin; and a solvent. A solar cell is provided with a p-type diffusion layer and an electrode that are formed by heat treatment after the p-type diffusion layer formation composition is applied on a semiconductor substrate. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2011253868(A) |
申请公布日期 |
2011.12.15 |
申请号 |
JP20100125519 |
申请日期 |
2010.06.01 |
申请人 |
HITACHI CHEM CO LTD |
发明人 |
NOJIRI TAKESHI;YOSHIDA MASATO;MACHII YOICHI;OKANIWA KAORU;IWAMURO MITSUNORI;ADACHI SHUICHIRO;KIZAWA KEIKO;SATO TETSUYA |
分类号 |
H01L21/225;H01L21/28;H01L21/285;H01L31/04 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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