发明名称 P-TYPE DIFFUSION LAYER FORMATION COMPOSITION, AND SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a p-type diffusion layer formation composition capable of forming a p-type diffusion layer and a back electrode while suppressing occurrences of internal stress in a silicon substrate and substrate warpage, in a manufacturing process of a solar cell using a crystal silicon substrate, and to provide a solar cell formed by using the p-type diffusion layer formation composition. <P>SOLUTION: A p-type diffusion layer formation composition includes: metal particles; glass particles containing an acceptor element; a resin; and a solvent. A solar cell is provided with a p-type diffusion layer and an electrode that are formed by heat treatment after the p-type diffusion layer formation composition is applied on a semiconductor substrate. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011253868(A) 申请公布日期 2011.12.15
申请号 JP20100125519 申请日期 2010.06.01
申请人 HITACHI CHEM CO LTD 发明人 NOJIRI TAKESHI;YOSHIDA MASATO;MACHII YOICHI;OKANIWA KAORU;IWAMURO MITSUNORI;ADACHI SHUICHIRO;KIZAWA KEIKO;SATO TETSUYA
分类号 H01L21/225;H01L21/28;H01L21/285;H01L31/04 主分类号 H01L21/225
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