| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing liquid for CMP with high versatility, which is less dependent on a substrate surface condition compared to conventional polishing liquids while capable of achieving a sufficiently high polishing speed for silicon oxide films, and to provide a polishing method using the polishing liquid for CMP. <P>SOLUTION: The polishing liquid for CMP of the present invention includes: abrasive grains; a first additive; and water. The first additive is at least one of 1,2-benzoisothiazole-3(2H)-one and 2-aminothiazole. The polishing method of the present invention is a polishing method for a substrate having a silicon oxide film on the surface, and includes a step of polishing the silicon oxide film with a polishing pad while the polishing liquid for CMP is supplied between the silicon oxide film and the polishing pad. <P>COPYRIGHT: (C)2012,JPO&INPIT |
